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我的稿件
686
2D TMD FETs摘要待审

Yang Chai*

全体主题 > Nanoelectronics

675
Enhanced Interfacial Characteristics of Atomic Layer Deposited LaAlO3 Thin Films终稿

Xing Wang*

全体主题 > Nanoelectronics

673
Graphene synaptic transistor based on Ion-Gel dielectric终稿

Chuanyu Han, Xin Li, Chenrong Gong, Guohe Zhang*, Lin Chen, Weihua Liu

全体主题 > Nanoelectronics

671
Fast Improved Thin-Film Transistors with Atomic-Layer-Deposited In2O3 Channels via O2 Plasma Treatment终稿

Qian Ma*, Letao Zhang, Shengdong Zhang

全体主题 > Nanoelectronics

630
High Performance W/n-Si Schottky Diode using Black Phosphorus as an Interlayer.终稿

Priyanka Kumari*, V. Ramgopal Rao

全体主题 > Nanoelectronics

616
Magnetic Properties of Transition Metal Doped 3C-SiC Nanowires Based on First Principles Calculation终稿

JIANING SU, YING YANG*, SHAOHUAN NING

全体主题 > Nanoelectronics

607
Influence of a Novel 2D Material MXene on the Behavior of Memristor and Its Crossbar Array终稿

Nan He, Yi Tong*, Xinwei Liu, Fei Gao, Yu Wang, Miaocheng Zhang, Xinyi Shen, Ertao Hu, Xiang Wan, Xiao Gong, Lin He, Xiaojuan Lian

全体主题 > Nanoelectronics

602
Improved electrical properties of MoS2 transistor with Hf1-xTixO as gate dielectric终稿

Xu Jingping*, xinyuan zhao, liu lu, Lai P.T, Tang W.M, hui su

全体主题 > Nanoelectronics

591
The Properties of Surface Passivated PbS Quantum Dots终稿

Chunlan Chen, Hongbin Pu*, Yingxiang Yang, Min Wang, Xiaomin He

全体主题 > Nanoelectronics

580
Preparation of SiC/SiNWs heterostructure on 4H-SiC(0001)终稿

yuan zang, LianBi Li*

全体主题 > Nanoelectronics

563
Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate终稿

Linyuan Zhao*, Wenjie Chen, Renrong Liang, Yu Liu, Jun Xu

全体主题 > Nanoelectronics

557
Quantum Confinement Effects and Electrostatics of Planar Nano-scale Symmetric Double-Gate SOI MOSFETs终稿

Aditya Sankar Medury*, Harshit Kansal

全体主题 > Nanoelectronics

554
Static thermal simulation of Heterogeneous InP-Silicon 3D IC Stack终稿

Yang yanhui, Zhang yi*

全体主题 > Nanoelectronics

539
High Crystalline Quality of Si0.5Ge0.5 Layer Grown on a Novel Three-layer Strain Relaxed Buffer终稿

Zhiqian Zhao, Yongliang Li*, Wenwu Wang

全体主题 > Nanoelectronics

460
Low-temperature electrical characterization of p- and n-type MoTe2 transistors终稿

Renrong Liang, Jun Xu, Wenjie Chen*

全体主题 > Nanoelectronics

重要日期

  • 会议日期

    06月12日

    2019

    至

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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Xi'an University of Technology
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