563 / 2019-03-14 23:17:44

Tunneling Leakage Current of Gate-All-Around Nanowire Junctionless Transistor with an Auxiliary Gate

Gate-all-around nanowire junctionless transistor,auxiliary gate,band-to-band tunneling,energy band

全体主题 > Nanoelectronics

Gate-all-around nanowire junctionless transistor with an auxiliary gate (AG-GAAJLT) is proposed to restrain the band-to-band tunneling (BTBT) resulted in off-state leakage current in junctionless transistor. The device is investigated through three-dimensional (3D) numerical simulations. Results show that the AG-GAAJLT has seven orders of magnitude lower off-state current compared with the conventional gate-all-around junctionless transistor (C-GAAJLT). The effects of auxiliary gate voltage (VAG) and distance between control gate and auxiliary gate (dG-AG) are studied, and the optimizations of VAG and dG-AG are presented. This work provides a new method to solve the BTBT in GAAJLT.