630 / 2019-03-18 14:17:44

High Performance W/n-Si Schottky Diode using Black Phosphorus as an Interlayer.

Schottky barrier height (SBH),Schottky diode,Black phosphorous,ideality factor

全体主题 > Nanoelectronics

The novel application of mechanically exfoliated Black Phosphorus (BP) as an interlayer is explored for the first time in W/n-Si Schottky barrier diode (SBD). The SBD performance was significantly enhanced with an increase in Schottky barrier height from ~0.48 eV to ~0.59 eV, improvement in ideality factor from ~2 to ~1 and increase in ON/OFF ratio from ~102 to ~105 with BP interlayer at room temperature. The performance enhancement was found to be across a wide temperature range from 298K to 398K.