539 / 2019-03-11 19:31:26

High Crystalline Quality of Si0.5Ge0.5 Layer Grown on a Novel Three-layer Strain Relaxed Buffer

SiGe,epitaxial grown,strain relax buffer

全体主题 > Nanoelectronics

A novel three-layer SiGe strain relaxed buffer, whose Ge concentration increased from bottom to top by roughly 10% with an in-situ annealing after each layer grown, is developed to effectively constrain the threading dislocation. Meanwhile, an optimized chemical-mechanical planarization step is employed to improve the surface roughness of strain relaxed buffer layer and Si0.5Ge0.5 layer. Finally, a high crystal quality and full strained Si0.5Ge0.5 layer with an atomically smooth surface and a thickness of at least 100 nm is successfully prepared on this novel CMP-treated three-layer SiGe strain relaxed buffer.