This symposium will cover the scientific and technological exploration and advances of materials for emerging nonvolatile memories devices. A wide range of topics will be covered from fundamental material properties and integration issues, to technology demonstration and industrial devices. Contributions are expected to explore the use of emerging either inorganic or organic materials to realize nonvolatile devices applying advanced and novel technologies. To this end, focus areas include semiconducting and metallic nanocrystal memories, silicon-oxide-nitride-oxide-silicon (SONOS) and related charge-trapping memories, magnetic random access memories (MRAM) and spin-torque transfer random access memories (STT-RAM), ferroelectric random access memories (FeRAM), chalcogenide materials, resistive random access memory (ReRAM) concepts, materials and devices, nanoelectromechanical systems; as well as polymer materials and more recent advances in molecular memories. The importance of this technological field is now increasing since incumbent semiconductor non-volatile devices such as Flash memory are now facing serious future scaling problems. Recently, significant research effort has been focused worldwide on the realization of a unified memory with the characteristics of very fast random access memories and long data retention times. Nonvolatile memories are the last three years the most valuable product of the semiconductor industry. Moreover, the blossoming of flexible electronics has put great demands on memory devices. These trends have been confirmed by the increasing number of submitted abstracts in the field compared to the previous symposiums.