66 / 2024-07-28 23:31:07

Comparative Analysis of Voltage Clamping Methods for SiC MOSFET-Based DC-SSCB

DC circuit breaker,SiC MOSFET,Solid State Circuit Breaker,Design Consideration

2.Power Electronics Technology and Application > 4.Power semiconductor devices, passive components, packaging, integration, and materials

Abstract -- Although conventional electromechanical circuit breakers have a proven record as effective and reliable devices for circuit protection, emerging power distribution technologies and architectures, such as dc microgrids, data centers, battery energy storage systems, and electric vehicle (EV) charging infrastructures require improved interruption performance characteristics (e.g., faster switching speed). The need for faster switching operation, in combination with the latest developments of advanced power semiconductor technologies, along with the increasing maturity for the material and process of the wide bandgap semiconductor Silicon Carbide (SiC). Has spurred an increase in the research and development in the area of solid-state circuit breakers. This article provides a comprehensive comparative analysis of voltage clamping methods for safe operation area (SOA) of SiC MOSFET-based various solid-state circuit breaker technologies. The simulation results and existing problems in different protection circuits are summarized in the end.