656 / 2019-04-04 17:14:42

Effects of different energy proton irradiation on DC characteristics of InP-based HEMT

InP-based HEMs, proton irradiation, incident energy, electrical characteristic

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The impacts of incident energy of proton on InP-
based high electron mobility transistors (HEMTs) are
investigated by numerical simulations. The simulations are
performed using the hydrodynamic model and Shockley–
Read–Hall recombination model. The results show that the
drain current, transconductance and threshold voltage degrade
more severely at low incident energy which are mainly due to
the electron density in the channel reduced more seriously at
low incident energy than high incident energy.