650 / 2019-04-02 16:32:27

Low power Resistive Switching Phenomena in Ti/SiN/Au Memory Device

resistive random access memory,,SiN,,trap-controlled space charge limited current,,power

全体主题 > Memory Devices and Technology

In this letter, the Ti/SiN/Au bipolar resistive random access memory devices were fabricated and investigated. The devices show low operation voltages (SET voltage ~0.6V, RESET voltage ~-0.5V), low switching currents (~1mA) and stably high/low resistance ratio. The power densities of SET and RESET process were both in the order of 10-9 (W/μm2), which were much lower than previous literature results about SiN-based resistive switching cells. The conduction mechanism is dominated by the trap-controlled space charge limited current (SCLC) mechanism. In addition, using the Ti and Au as the electrodes is the significant reason for the excellent characteristics of the device.