647 / 2019-03-28 11:41:42
RF Modeling of the 3D Electro-Photonic Integration based on SOI Photonic TSV Interposer
3D electro-photonic integration,TSV interposer,modeling
终稿
Yan Yang / Institute of Microelectronics of the Chinese Academy of Sciences
Rusli Rusli / Nanyang Technological University
Mingbin Yu / Shanghai Institute of Microsystem and Information Technology of Chinse Academy of Sciences
The scheme of 3D electro-photonic integration based on silicon-on-insulator (SOI) photonic through-silicon-via (TSV) interposer provides a shorter communication routing and lower power dissipation with the scenario of vertical interconnects, and therefore has becoming one promising solution for continued scaling of tera-scale optical communication systems. In this work, the radio-frequency (RF) modeling of the routing of TSV and the Si photonic device’s Cu-back end of line (BEOL) is presented and analyzed. Finally, this modeling provides a design framework for optimizing the RF performance of the high speed silicon photonic devices in the electro-photonic 3D TSV integration architecture.
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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