643 / 2019-03-22 16:57:32

Analysis of Dynamic Avalanche Ruggedness of Semi-SJMOS

SJMOS, Semi-SJMOS, Dynamic Avalanche, Ruggedness, Bottom Assist Layer

全体主题 > Silicon Devices

Abstract—The switching characteristics under UIS condition of Semi-SJMOS are studied by Senturenus-TCAD simulator in this paper. Take for 780V as example, the internal current, electric field distribution during dynamic avalanche is compared with that of SJMOS. The influence of the key structure parameters(bottom assist layer, pillar region etc.)and the operating temperature on avalanche energy of Semi-SJMOS are analyzed. Finally, the improvement measures of the avalanche ruggedness and the optimization parameters of bottom assist layer are given.