639 / 2019-03-22 11:14:47

A Novel IE-Bi-MCT Structure Rated up to 6.5kV for Lower Losses

the electron injection enhancement (IE),Base resistance control thyristor (BRT),Thyristor mode,MOS-controlled thyristor (MCT)

全体主题 > Silicon Devices

A novel electron injection enhanced Bi-mode MOS controlled thyristor structure (IE-Bi-MCT) is proposed in this paper, which is formed by introducing the electron injection enhancement (IE) into the structure of the base resistance-controlled thyristor (BRT) with effect. Take 6500V as an example, the static and dynamic characteristic of IE-BiMCT is analyzed by Sentaurus-TCAD simulator, the results show that this structure achieves a good trade-off between onstate loss (Eon) and turn-off loss (Eoff).