637 / 2019-03-21 21:55:30

A Novel Trench Gate MOS Turn-off GCT Structure

GCT, MOS, turn-off, trench gate

全体主题 > Power Electronics

Abstract—A novel trench gate MOS turn-off GCT (T-MOS-GCT) is proposed in this paper, in which a trench pMOS is induced between the conventional gate and the main GCT cell. The turn-on of T-MOS-GCT is controlled by current signals applied to the conventional gate, Gon, and the turn-off of T-MOS-GCT is controlled by voltage signals applied to the trench gate, thus the T-MOS-GCT can achieve internal commutation. The internal commutation mechanism and characteristics are studied by Sentaurus-TCAD simulator, the results show that T-MOS-GCT can obviously improve turn-off current capability compared with planar gate MOS-GCT(P-MOS-GCT).