626 / 2019-03-16 09:28:29
Improving Performance of Pentacene Field-effect Transistors by Optimizing Substrate Temperature and Active Layer Thickness
Organic field-effect transistor, pentacene, Substrate temperature, film thickness
终稿
Shi-guang Li / Department of Electronic Engineering Xi'an University of Technology
Peng-hui Chen / Xi'an University of Technology
High performance pentacene-based organic field-effect transistors (OFETs) with different substrates temperatures and film thicknesses were fabricated. The device performance improved visibly the substrate temperature was 69℃ and the pentacene film thickness was about 39nm. The field-effect mobility reached as high as 0.42cm2/Vs, the sub-threshold swing was 534mV/dec, and the on/off ratio was 107-108. Electrical properties and film morphology of the device indicate that the substrate temperature affects grain size of the film, and the film thickness affects the trap density of the film.
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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