625 / 2019-03-16 02:20:36

A Snapback-Free Reverse-Conducting IGBT with Integrated Schottky Diode in the Collector

reverse-conducting,IGBT,schottky,snapback-free,performance

全体主题 > Power Electronics

A novel snapback-free reverse-conducting insulated gate bipolar transistor with integrated schottky diode in the collector (ISD-RC-IGBT) is proposed. The proposed structure features an ISD between the n+ collector and the n field stop (FS) layer in the device bottom. The simulation results show that compared to the conventional RC-IGBT, the proposed device demonstrates excellent overall performance in both IGBT and diode modes. Meanwhile, the device reliability is also improved owing to the uniform carriers and current distribution in the drift region in both IGBT and diode modes.