617 / 2019-03-15 22:51:26
A fast off and low current crowding MOS-controlled thyristor with Schottky junction in the OFF-FET
MOS-controlled thyristor,current crowding,pulse power
终稿
M. H. Tang / School of Materials Science and Engineering, Xiangtan University
Y. L. Sun / School of Materials Science and Engineering, Xiangtan University
Z. H. Chen / School of Materials Science and Engineering, Xiangtan University
G. Li / School of Materials Science and Engineering, Xiangtan University
Y. G. Xiao / School of Materials Science and Engineering, Xiangtan University
W. Zhou / Semiconductor Business Unit, Zhuzhou CRRC Times Electric Co., Ltd
A fast off and low current crowding MOS-controlled thyristor (MCT) with Schottky junction in the OFF-FET (S-MCT) is developed for pulse power applications. The proposed S-MCT split the emitter into two parts. One in contact with the thyristor is ohmic contact, and the other in contact with OFF-FET is Schottky contact. This design adds a Schottky diode between the electrode and the OFF-FET to help the device turn off quickly while keeping the forward advantage of MCT. The simulation results also show that compared with the traditional MCT (C-MCT), S-MCT can achieve a significant reduction in the rate of current crowding (from 85.5 % to 15.7 %), which occurs in the OFF-FET during turning off.
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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