597 / 2019-03-15 20:30:51

Design and Optimization of an Area-efficient SOT-MRAM

Magnetic random access memory (MRAM),spin orbit torque (SOT),high density,write policy

全体主题 > Memory Devices and Technology

Spin orbit torque magnetic random access memory (SOT-MRAM) offers a superior approach to overcome the write speed and energy bottlenecks of the conventional STT-MRAM. However, the cell density of SOT-MRAM is constrained due to more access transistors. In this work, we present a NAND-Like architecture for SOT-MRAM with a single transistor and several diodes, as well as a novel adaptive array design based on the proposed cell structure. Compared with the standard SOT-MRAM, the proposed SOT-MRAM achieves significant improvement in the cell density by sharing transistors, meanwhile attains a comparable write speed. The overhead of write energy can be compensated by a well-designed write policy.