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595 / 2019-03-15 20:11:57
Uniformity and Endurance Enhancement of Valance Changed Resistive Switching Memory (VCM) by a New Pulse Method
OxRAM, Uniformity, Endurance
全体主题 > Memory Devices and Technology
终稿
Jie Yu / Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China
Xiaoxin Xu / Institute of Microelectronics, Chinese Academy of Sciences
Tiancheng Gong / Institute of Microelectronics, Chinese Academy of Sciences
Qing Luo / Institute of Microelectronics, Chinese Academy of Sciences
Lu Tai / Institute of Microelectronics, Chinese Academy of Sciences
Xiaoyan Li / Institute of Microelectronics, Chinese Academy of Sciences
Peng Yuan / Institute of Microelectronics, Chinese Academy of Sciences
Danian Dong / Institute of Microelectronics, Chinese Academy of Sciences
Jiahao Yin / Institute of Microelectronics, Chinese Academy of Sciences
Qingting Ding / Institute of Microelectronics, Chinese Academy of Sciences
Hangbing Lv / Institute of Microelectronics, Chinese Academy of Sciences
Ming Liu / Key Laboratory of Microelectronics Devices and Integrated Technology
In this work, we enhance the uniformity (cycle-to-cycle) and endurance characteristics of Valance Changed Resistive Switching Memory (VCM) by using an optimized programming strategy. This enhancement can be attributed to the eliminated over-reset process benefiting from the reduced reset pulse energy by this new pulse method. This work provides a useful tool for improving the reliability of RRAM technology.
重要日期

  • 会议日期

    06月12日

    2019

    至

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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Xi'an University of Technology
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