594 / 2019-03-15 19:28:07

Comparative study of bipolar Resistive Switching and complementary switching behavior of Cu-doped resistive devices

complementary resistive switching (CRS),hybrid conductive filament,Nanocrystal

全体主题 > Memory Devices and Technology

Resistive random access memory (RRAM) is a promising candidate for next-generation nonvolatile memory applications. To further understanding the mechanism of the resistive switching behavior is essential. Here, a comparative study of bipolar Resistive Switching and complementary switching behavior was implemented based on the Cu-doped resistive devices. Excellent bipolar resistive switching behavior has been achieved by introducing the NCs into the HfOx oxide. Meanwhile, a highly stable nature of CRS was achieved in W-I device.