586 / 2019-03-15 16:57:42
Investigation on Short Circuit Test of 3300 V SiC MOSFET
Short Circuit, SiC, 3300 V MOSFET
终稿
Hong Chen / Institute of Microelectronics of the Chinese Academy of Sciences
Zhonglin Han / Institute of Microelectronics of the Chinese Academy of Sciences
Ximing Chen / Zhuzhou CRRC Times Electric Co. Ltd.
Yanli Zhao / Zhuzhou CRRC Times Electric Co. Ltd
Yun Bai / Institute of Microelectronics of the Chinese Academy of Sciences
Zhengsheng Han / Institute of Microelectronics of the Chinese Academy of Sciences
SiC MOSFET is considered to be a promising power device for high voltage, high frequency and high temperature application.The short circuit characteristic is very important for SiC MOSFET. This paper studies the short circuit characteristic of 3300V SiC MOSFET under different conditions, and the short circuit failure mode is also discussed.
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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