584 / 2019-03-15 15:22:58

NIR-emitting erbium/oxygen-doped silicon by self-assembled techniques

silicon photonics,NIR luminescence,erbium doping,self-assembled monolayers

全体主题 > Silicon Devices

Self-assembled monolayer (SAM) techniques have been developed to dope silicon surfaces with use of erbium radiation sources. After rapid thermal annealing at 1050 ℃, surface monolayer structure and dopant concentration distribution were characterized by X-ray photoelectron spectroscopy and secondary ion mass spectroscopy measurements, respectively. A distinctive 4I13/2 → 4I15/2 transition of erbium ion (4f) glowing at 1.54 μm has been observed at room temperature for these Er/O-doped Si samples. With these preliminary results, it is promising to develop room-temperature silicon-based light-emitting devices and lasers on the basis of these bottom-up SAM techniques.