583 / 2019-03-15 15:21:21

Influence of p- blocking base carrier lifetime on characteristics of SiC light-triggered thyristor

silicon carbide, light-triggered thyristor, minority carrier lifetime, turn-on delay time

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The influence of p- blocking base carrier lifetime on characteristics of SiC light-triggered thyristor (LTT) is studied by numerical simulation. The results indicate that longer p- blocking base carrier lifetime leads to lower on-state voltage drop. And the effects of p- blocking base minority carrier lifetime on turn-on characteristics of SiC LTT are related to the depletion width of p- blocking base region at different bias voltages. In the same range of p- base lifetime change from 0.13μs to 10μs, the turn-on delay time of the LTT, in which the p- blocking base is not completely depleted, is reduced from 5.52μs to 1.53μs at a forward voltage of 850V. However, the turn-on delay time of the LTT, in which p- blocking base is fully depleted, keeps almost unchanged at the voltages of 1700V and 8500V.