582 / 2019-03-15 15:13:43
A 20 ppm/℃ Current Reference with improved ZTC Characteristic for SerDes application
BiCMOS, current reference, SerDes, ZTC
终稿
Kai Jing / Xi'an University of Technology
Yu Ningmei / Xi'an University of Technology
Guo Zhongjie / Xi'an University of Technology
Quan Xing / Xi’Dian University
Lv Yuze / Chongqing Chip dragon Co.,Ltd.
This paper presents a temperature insensitive current reference for SerDes application using SiGe BiCMOS technology. Modified zero temperature coefficient (ZTC) characteristic of MOS transistor is proposed and implemented in this design. Process variation effects caused by mismatch and temperature drift are discussed and minimized. Implemented in 0.18 μm SiGe BiCMOS technology, test have shown that an average current sensitivity of 20 ppm/℃ (-15 to 130 ℃) is achieved with 3 V power supply.
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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