576 / 2019-03-15 12:22:54

A 15.6 dBm P_sat, 24 dB Gain, 24.4%PAE, Linear CMOS Power Amplifier for 5G Application

CMOS, power amplifier, transformer coupling, 5G

全体主题 > RF & Microwave

This paper presents a 26GHz power amplifier for high band 5G application in 65nm CMOS technology. By using three stage differential common source topology plus final four-way power combiner, 24dB gain of PA is achieved at millimeter wave frequency. Complicated inductor, transformer and capacitor scheme provides good matching for input, inter-strage and output at 26GHz band. Simulation results demonstrate the PA with Psat of 15.6 dBm, OP1dB of 13.325 dBm, and peak PAE of 24.44%. Its -3dB bandwidth covers 4GHz, with better than 10dB input/output return loss across band. It consumes 74mA from a 1.5V supply.