551 / 2019-03-14 19:26:47

Investigation on the Modeling of 3300 V SiC MOSFET

3300 V SiC MOSFET, Advanced Design System, Modeling, Double Pulse Test

全体主题 > Power Electronics

This paper studies the modeling of the self-developed 3300 V / 5 A SiC MOSFET. After extracting
parameters from output characteristics and capacitance characteristics by Advanced Design System (ADS), an accurate model is established. With this model, the simulation results are in good agreement with the experimental data. Furthermore, a series of double pulse tests are carried out to
verify the accuracy of the model, laying solid foundation for further application.