518 / 2019-03-05 13:59:32

Influence of energy band of n+ a-Si thin films on performance of IBC-SHJ solar cells

N+ a-Si thin films, Energy band, IBC-SHJ, Simulation, Front surface

全体主题 > Renewable Energy Devices and Systems

Interdigitated back contact silicon hetero-junction (IBC-SHJ) solar cells exhibit excellent performance because of the combination of IBC structure and SHJ technology. The front surface field (FSF) which consists of chemical passivated layer and electrical field passivated layer, has proved to be very important for achieving high conversion efficiency. In term of electrical field passivated layer, the n+ doped thin films based on alloys of Si with carbon or oxygen in amorphous phases (n+ a-Si) is present by Sentaurus TCAD to investigate energy band performance. The simulation result indicates that the n+ a-Si layer with wider energy band reduces the light absorption on the front surface effectively, results in large improvement in short circuit current density (Jsc).As field passivated layer, the wider energy band of n+ a-Si leads no effect on better passivation. The main role creating electrical field is doping concentration, and field passivation effect enhance as doping concentration increasing. With the better optical performance and field passivation, the conversion efficiency achieve above 26% on the poor interfacial chemical passivation using wider n+ a-Si layer on the front surface.