514 / 2019-03-04 16:24:53

A Curvature Compensated BJT-based Time-Domain Temperature Sensor With An Inaccuracy of ±0.7°C From -40°C to 125°C

CMOS temperature sensor,Time domain,Low-power,Curvature compensation

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This paper presents a BJT-based time-domain temperature sensor with VBE-curvature compensation. The temperature dependent signals from the BJT frontend are processed by the delay pulse generator to produce a temperature dependent pulse width modulation (PWM) signal for low power consumption. To further improve the sensing accuracy, the PWM signal is quantized using an on-chip current-controlled oscillator (CCO) to compensate for the intrinsic VBE non-linearity. Implemented in a standard 0.18-µm CMOS process, the proposed sensor achieves an inaccuracy of ±0.7°C using only one-point calibration at 30°C, while consuming a nominal power of 5.7μW over a wide range from -40°C to 125°C.