442 / 2019-02-27 12:07:46
A Gain & Bandwidth Reprogrammable Neural Recording Amplifier with Leakage Reduction Switches
neural recording amplifier, reprogrammable arrays, leakage reduction, high off-resistance switch
终稿
Siwan Dong / Xi`an University of Posts & Telecommunications
Xingyuan Tong / Xi`an University of Posts & Telecommunications
Liwen Liu / Xidian University
Andi Yang / Xi`an University of Posts & Telecommunications
Rujie Li / Xi`an University of Posts & Telecommunications
The off-resistance non-ideal effect of MOSFET switches in reprogrammable neural recording amplifiers has been analyzed in this paper. Then a novel leakage reduction switch structure for feedback impedance arrays is proposed to extended low frequency bandwidth. As a case study, a low-noise, wide gain and bandwidth reconfigurable neural recording amplifier has been designed and simulated in a 0.18μm CMOS process. Simulated characteristics of the amplifier include tunable gain of 20~40dB, programmable low-cutoff frequency of 0.025~125Hz, high-cutoff frequency of 1~125 kHz, respectively. The input referred noise is 6.75μVrms (0.5~11.4kHz, 40dB) and the power consumption is 8.1μW.
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

承办单位
Xi'an University of Technology
联系方式
历届会议
移动端
在手机上打开
小程序
打开微信小程序
客服
扫码或点此咨询