438 / 2019-02-27 11:14:12

A SOI based dopant-free MOSFET for logic and memory application

dopant-free, SOI, HfZrO, inverter, memory

全体主题 > Silicon Devices

In this paper, a SOI based dopant-free MOSFET was proposed. The device exhibits a current saturation vs gate voltage due to the existence of source/drain series resistance. The steady low saturation current indicates a low-power dissipation application. With a dual-gate control, the device’s threshold voltage for the top gate can be effectively adjusted by the bottom back gate. A resistive load inverter was fabricated based on this dopant-free transistor and realized a characteristic voltage transfer curve with a low peak path current. By employing a thin silicon oxide as tunneling layer and a thin HfZrO as trapping layer, a non-volatile memory (NVM) was realized using the same dual-gate transistor and a 1.21 V memory window was acquired after a 10 V/100 ms voltage pulse writing. Both the logic and memory functions have been realized at the same simple proposed structure.