421 / 2019-02-26 13:20:32

A Novel Slope-Channel Double-Gate MOSFET for Low-Power Applications

MOSFET, double-gate, slope-channel, SCEs, subthreshold performances

全体主题 > Nanoelectronics

Double-gate MOSFET (DG MOSFET) shows great suppression of the short channel effects (SCEs) due to the enhanced gate-control capability but requires the downscaling of channel thickness. To address these challenges, we propose a novel slope-channel double-gate MOSFET (SCDG MOSFET) to enhance the subthreshold performances while maintaining the channel thickness and the complexity of fabrication process. The simulation results show that the SCDG MOSFET greatly improves the subthreshold performances compared to the conventional DG MOSFET. The main mechanism is the reduction of channel potential attributed to the enhanced gate control capability.