419 / 2019-02-26 11:19:38

Thin-barrier InAlN/GaN MISHEMTs using LPCVD Si3N4 as gate dielectric

InAlN,GaN,MISHEMT,thin barrier,leakage

全体主题 > Compound Semiconductor Devices

In this work, thin-barrier InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) with high drain current density and low gate leakage are fabricated and analyzed. In order to suppress the gate leakage, wide-bandgap Si3N4 deposited by low pressure chemical vapor deposition (LPCVD) is used as gate dielectric. The device with a gate length of 1.5 μm demonstrates a drain current of 1.4 A/mm, a gate leakage current of 0.1 μA/mm, and a current on/off ratio of ~10^7. In addition, the impact of passivation on the gate leakage of InAlN/GaN MISHEMT is also investigated.