409 / 2019-02-15 09:50:46

Plasma Influences on the Performance of Ti Protected Back-Channel-Etched a-IGZO TFTs

a-IGZO,back channel etched,plasma treatment,thin film transistor

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A back-channel-etched process with Ti protective layer was used to fabricate the amorphous a-IGZO TFTs. To oxidize the Ti to TiO2 on the back channel, kinds of plasma treatments were imposed to the Ti protective layer. The device with N2O plasma at 300°C in PECVD exhibits superior oxidizing effect, which is well compatible with large area production.