385 / 2019-01-25 20:41:01
Turn-Off Over-Voltage character of 6500V/600A IGBT Module
6500V IGBT module, turn-off spike voltage, gate resistance, junction temperature
终稿
chen juan / Xi’an University of Technology
cao lin / CRRC YONGJI ELECTRIC CO
zang yuan / Xi’an University of Technology
this paper investigation the turn-off processes of 6500V IGBT module by analytical model and device physics, three types of commercial 6500V/600A IGBT module were tested with inductive load by double-pulse methods. The testing and analysis results show that turn-off over voltage semi-controllable by the gate resistance, increases first and then decreases, mainly depend on the proportion of MOSFET electron current to the excess swept-out hole current when the voltage rise to the bus voltage. With increase IGBT junction temperature, the turn-off over voltage decreases, therefore turn-off over voltage failure is prone to occur when IGBT start working at low junction temperature.
重要日期
  • 会议日期

    06月12日

    2019

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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