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375 / 2019-01-22 16:42:32
Modelling on GaN Power HEMT with Condideration of Subthreshold Swing Using Artificial Intelligence Technology
AI,model,AlGaN/GaN,HEMT
全体主题 > Modeling and Simulation Technology
全文被拒
Yuanzhe Yao / University of Electronic Science and Technology of China
Zeheng Wang / University of Electronic Science and Technology of China
Liang Li / University of Electronic Science and Technology of China
Di Yang / University of Electronic Science and Technology of China
Shengji Wang / University of Electronic Science and Technology of China
Xinghuan Chen / University of Electronic Science and Technology of China
In this paper, we report a model to AlGaN/GaN power HEMT based on the artificial intelligence (AI) technology, wherein the model focuses on the subthreshold swing of the device. Verified by the modelling results, the proposed model matches the experimental data very well in both subthreshold region and linear region, suggesting its potential in power electronics application such as converter design.
重要日期

  • 会议日期

    06月12日

    2019

    至

    06月14日

    2019

  • 06月12日 2019

    初稿截稿日期

  • 06月14日 2019

    注册截止日期

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Xi'an University of Technology
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