370 / 2019-01-14 20:55:30

A Non-Ohmic Normally-off GaN RB-MISHEMT Featuring a Gate-Controlled Schottky Tunnel Junction

MISHEMTs, Schottky tunnel barrier, tunneling probability, reverse blocking

全体主题 > Compound Semiconductor Devices

A non-Ohmic normally-off GaN reverse blocking metal-insulator-semiconductor high electron mobility transistors (RB-MISHEMTs) with a MIS field-effect Schottky tunnel junction at source electrodes is proposed for the first time. The device exhibits normally-off operation by virtue of the thick source’s Schottky tunnel barrier, whose effective width is controlled by the insulated gate next to Schottky-structure source. A positive gate bias can reduce the barrier width and subsequently enhance the tunneling probability, while a zero gate bias results in a thick barrier which can effectively suppress the tunnelling current. The Schottky-structure drain with gated edge termination enables the device with reverse blocking capability and low reverse leakage current. The proposed device delivers a low off-state leakage current of 1μA/mm and a low onset voltage of 0.6 V at same time. Moreover, the absence of Au-based Ohmic process and high temperature annealing process enables the proposed device with CMOS compatibility and low thermal budget.