362 / 2019-02-24 16:15:28

A High Speed High Voltage Normally-off SiC Vertical JFET Power Device

SiC, JFET, specific on-resistance, high speed

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A high speed 3350V normally-off SiC vertical junction field-effect transistor (VJFET) power device is proposed in this paper. The gate-drain Miller capacitance of the proposed VJFET is greatly reduced in comparison with that of the conventional trenched-and-implanted JFET(TI-JFET), which results in a less than 25ns extremely fast turning-off speed. Meantime, the proposed SiC VJFET also has a low specific on-resistance with a value of 11.8mΩ∙cm2 when VGS is 2.6V.