353 / 2019-02-22 12:45:52

Effect of large C/Si ratio on Morphology and Magnetic Property of 3C-SiC

3C-Si,C/Si ratio,magnetization

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Abstract—Silicon carbide (SiC) with magnetic property is a very promising diluted magnetic semiconductor (DMS). 3C-SiC was prepared on Si substrate by LPCVD. The magnetic properties and microstructures of the 3C-SiC with different large C/Si ratio were investigated in this paper. The characterization results showed that the 3C-SiC was polycrystalline with (111) preferred orientation. The microstructure of epi-layers varied with C/Si ratio. Nanowires were appeared when the C/Si ratio is 14. All samples had a magnetic property. The saturation magnetization was improved with C/Si ratio increasing, and the coercive force was also increased first and then decreased.