Conference topics include, but are not limited to:

Equipment for Ion Implantation, Annealing, and Metrology

• Tools for advanced beam line ion implantation
• Tools for plasma doping, cluster, and molecular ion beams
• Equipment for thermal and a-thermal annealing (laser, microwave, flash, neutral beams, etc.)
• Equipment for metrology of implantation control (particles, contamination, charging, etc.) and implanted layers (implant profiling, sheet resistance, etc.)
• Advanced process control (tool software assisted, fab solutions, “tool health factors”)

Ion Implantation and Annealing for Semiconductor Materials

• Ion implantation and annealing of Si, Ge, SiC, GaN and other III-V semiconductors, graphene, etc.
• New doping techniques: monolayer doping (MLD), atomic layer deposition (ALD), selective CVD/epi, MOCVD, laser-assisted doping, thermal and recoil mixing methods, etc.
• Ion-assisted methods for advanced photovoltaic devices and photon energy-shifting layers, etc.
• Layer transfer for heterogeneous materials integration, 3D IC stacking, etc.
• Comparison of different annealing techniques

Ion Implantation and Annealing for Non-Semiconductor Materials

• Etch rate control
• Dielectric constant modification
• Photo resist stabilization for multi-exposure lithography, etc.
• Biotechnology: processing of bio-compatible surfaces and interfaces, fabrication of DNA-scale sensors and bio-active devices, etc.

Ion Implantation for Devices

• Power and RF devices (Si, Ge, SiC, GaN, etc.)
• Large-area devices (displays, solar cells, wearables, etc.)
• LEDs, MEMS, image sensors, chemical and physical sensors, etc.
• Planar and non-planar CMOS (FinFETs, nanowires, etc.), 3D memories, etc.
• Junction contact and metal gate work function engineering
• Photonic devices: CMOS-photonic integration, materials for multi-dimensional photonic signal processing and transmission, vertical-cavity surface-emitting lasers, etc.
• Nano-scale device fabrication for quantum confined films, wires and dots, quantum information processing, etc.
• Metrology methods: elemental, electrical, and morphological analysis of 3D devices, junctions, strain, interfaces and contacts, etc..
• Ion beam assisted methods for near-surface material analysis (SIMS, RBS, etc.)

Modeling and Simulation

• Non-mainstream ion implantation methods (using plasma, high energy ions, atomic clusters, ion beam mixing, etc.) 
• Ion implantation into novel and exotic materials or device structures
• Defect generation due to ion irradiation
• Sputtering and surface modification due to ion bombardment