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活动简介

The ICSICT-2018 conference is the 14th in the series aiming to provide an international forum for the presentation and discussion of recent advances in solid-state and integrated circuit technology. The conference will be held on Oct.31-Nov.3, 2018 in Qingdao, China. All aspects of solid-state devices, circuits, processing technologies, materials and other related research are within the scope of the conference. The three days of contributed and invited presentations on the latest developments in diverse fields given in oral and poster sessions, panel discussions on leading edge technology issues, and other activities will provide extensive opportunities for technical information exchange as well as a stimulating environment for mutual communication among participants. Excellent Student Paper Award will be presented at the closing of the conference.

征稿信息

重要日期

2018-06-30
摘要截稿日期
2018-06-30
初稿截稿日期
2018-07-15
初稿录用日期
2018-08-15
终稿截稿日期

The Scope and Topics of the Conference

(Papers are solicited in, but not limited to the following areas)

 

VLSI Technologies

1.   Channel Engineering

2.   High-k/Metal gate Technology

3.   Advanced Source/Drain Technology

4.   Interconnect Technology

5.   Advanced 3D Integration

6.   Novel Process Technologies

7.   Ultra-Thin Body Transistors

8.   High Performance CMOS Platforms

9.   CMOS Like Novel Devices

10.   Advanced FinFETs and Nanowire FETs

11.   CNT, MTJ Devices and Nanowire Devices

12.   Low- Power and Steep Slope Switching Devices

13.   2D Devices and Technologies

14.   Advanced Technologies for Ge MOSFETs

15.  Organic semiconductor devices and technologies

16.  Compound semiconductor devices and Technology

17.   Ultra High Speed Transistors, HEMT/HBT etc. 

18.   Photoelectron Devices

19.   Advanced Power Devices and Reliability

20.   Flash Memory

21.   1T Magnetic RAM

22.   Resistive RAMs

23.   Phase Change Memory

24.   3-Dimensional Memory

25.   MEMS Technology

26.   Thin Film Transistors

27.   Sensors

28.   PV and Energy Harvesting

29.   Front End of Line (FEOL) Reliability

30.   Memory Reliability

31.   Back-End of Line and ESD Reliability

32.   Device Simulation & Modeling

33.   Process Simulation & Modeling

34.   Artificial Intelligence (Process & Device)

35.   Internet of Things  (Process & Device)

 

VLSI Circuits & ICCAD

36.   Processors

37.   Analog Circuits

38.   SOC

39.   PLL and CDR

40.   Low-Power Nyquist ADCs

41.   Digital Circuits Resilient

42.   High-Resolution and High Speed Data Converters

43.   Digital Chip-to-Chip and On-Die Interfaces

44.   Advanced Clock

45.   Artificial Intelligence  (Circuits & System)

46.   Internet of Things (Circuits & System)

47.   FPGA

48.   Memory Circuits

49.   Advanced Transceivers Techniques

50.   EDA

51.   RF Circuits and Systems

52.   Interference Robust RF Receivers

53.   Signal Processing

54.   System-Level Modeling & Simulation/Verification

55.   System-Level Synthesis & Optimization

56.   High-Level/Behavioral/Logic Synthesis & Optimization

57.   Physical Design

58.   DFM

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重要日期
  • 会议日期

    10月31日

    2018

    11月03日

    2018

  • 06月30日 2018

    摘要截稿日期

  • 06月30日 2018

    初稿截稿日期

  • 07月15日 2018

    初稿录用通知日期

  • 08月15日 2018

    终稿截稿日期

  • 11月03日 2018

    注册截止日期

主办单位
IEEE
承办单位
Fudan University
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