396 / 2017-04-25 11:45:11

Investigation into Reliability Assessment of Power Semiconductor for Hybrid DC Switch Application

hybrid DC switch,reliability assessment,power semiconductor,junction temperature,thermo-sensitive electrical parameters

This paper aims at reliability assessment of power semiconductor in hybrid DC switch. Specific focus is given to temperature measurement of power semiconductor during turn-off via thermo-sensitive electrical parameters. VCE, td(off), and dVCE/dt of IGBT are proposed as the indicator and calibrated. Comparative experiments with thermistor during hybrid DC switch breaking prove the validation of the method.