37 / 2015-10-10 16:42:48

Multi-Parameter Fluctuation Effects on InGaAsP/InP Geiger-Mode Avalanche Photodiodes

Optoelectronic device, avalanche photodiode, single photon avalanche diode

For Geiger-mode avalanche photodiodes, which are prospective for quantum information processing and single photon imaging, a statistical method is advanced to establish the quantitative correlation between the controllability of structure parameters and the homogeneity of device properties. Setting many parameters fluctuating independently and simultaneously, the collective effect of multi-parameters can be straightly obtained. For a typical InGaAsP/InP single-photon avalanche diode, it is seen that device homogeneity with excess bias fluctuation within 50% requires uncertainty in layer thickness and doping level better than ~3%.