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An Optimized Design of Active Current Source Driver for Mitigating Overshoot and Reducing Switching Losses in SiC MOSFETs
编号：40 访问权限：仅限参会人 更新：2024-08-15 10:46:23 浏览：87次 口头报告

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摘要
Gate driver techniques are crucial for managing the switching dynamics of wide bandgap (WBG) semiconductor devices. Unlike voltage source gate drivers, current source gate drivers reduce switching losses by maintaining a relatively constant current during the gating process. However, this advantage is counterbalanced by increased overshoot, oscillation, and electromagnetic interference (EMI) noise. To address these challenges, an optimal active current source gate driver (ACSD) is proposed that meets the conflicting requirements of low switching losses and suppression of overshoot and oscillation by dynamically adjusting the driver current level. The effectiveness of this technique is demonstrated through both theoretical analysis and simulation validation.
 
关键词
wide bandgap semiconductor; active current source gate drivers (ACSD); overshoot; EMI.
报告人
Xiaokang Zhang
PHD Student Hunan University

稿件作者
Xiaokang Zhang Hunan University
Ziyao Zhang Hunan University
Qiao Li Hunan University
Yue Wu CSG Electric Power Research Institute Co.； Ltd.、China Southern Power Grid
Yuebin Zhou State Key Laboratory of HVDC (Electric Power Research Institute, China Southern Power Grid)
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重要日期

  • 会议日期

    11月06日

    2024

    至

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    2024

  • 09月15日 2024

    初稿截稿日期

  • 11月08日 2024

    注册截止日期

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Huazhong University of Science and Technology
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