Investigation of the Low Secondary Electron Yield of Vertical Graphene During its Growth Process
编号:118 访问权限:仅限参会人 更新:2024-04-23 00:21:11 浏览:89次 张贴报告

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摘要
As the primary contributor to the formation of the electron cloud and the multipactor effect, it is essential to minimize the secondary electron yield on the surface of vacuum devices. This study reports the utilization of the plasma enhanced chemical vapor deposition method to deposit vertical graphene coatings onto a nickel substrate. Subsequent analysis revealed that the secondary electron yield of various vertical graphene configurations is less than 1, indicating a potential resolution to challenges stemming from the secondary electron multiplication effect. This paper examines the growth process of vertical graphene through material characterization at various growth stages, coupled with simulation analysis. Ultimately, the mechanisms underlying the low secondary electron emissions are explored, leading to the identification of key factors influencing the size of secondary electrons in vertical graphene. Consequently, recommendations for the fabrication of a low secondary electron metal carbon coating are presented based on these findings.
 
关键词
Secondary electron emission, Surface coating, Vertical graphene, Growth process, Electron capturing trap
报告人
Xiaoning Zhang
中物院流体物理研究所

稿件作者
Xiaoning Zhang 中物院流体物理研究所
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  • 会议日期

    05月13日

    2024

    05月17日

    2024

  • 03月31日 2024

    注册截止日期

  • 04月15日 2024

    摘要截稿日期

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冲击波物理与爆轰物理全国重点实验室
浙江大学物理学院
中国核学会脉冲功率技术及其应用分会
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