Investigation of the Low Secondary Electron Yield of Vertical Graphene During its Growth Process
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更新:2024-04-23 00:21:11 浏览:89次
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摘要
As the primary contributor to the formation of the electron cloud and the multipactor effect, it is essential to minimize the secondary electron yield on the surface of vacuum devices. This study reports the utilization of the plasma enhanced chemical vapor deposition method to deposit vertical graphene coatings onto a nickel substrate. Subsequent analysis revealed that the secondary electron yield of various vertical graphene configurations is less than 1, indicating a potential resolution to challenges stemming from the secondary electron multiplication effect. This paper examines the growth process of vertical graphene through material characterization at various growth stages, coupled with simulation analysis. Ultimately, the mechanisms underlying the low secondary electron emissions are explored, leading to the identification of key factors influencing the size of secondary electrons in vertical graphene. Consequently, recommendations for the fabrication of a low secondary electron metal carbon coating are presented based on these findings.
关键词
Secondary electron emission, Surface coating, Vertical graphene, Growth process, Electron capturing trap
稿件作者
Xiaoning Zhang
中物院流体物理研究所
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