摘要详情

ID / 提交时间

191 / 2023-10-20 19:19:34

标题

A Gate Current Detection for Short-Circuit Protection of SiC MOSFET

关键字

Short-circuit Protection, Hard Switching Fault, Fault Under Load

主题及专题

2.Power electronic technology and application > (4)、Wide bandgap semiconductor technology

状态

终稿

作者

Bo Hu / Hunan University

Zipeng Ke / Hunan University

Minmin He / Hunan University of Electrical and Information Engineering

Chao Zhang / Guizhou University

Zeng Liu / Hunan University

Jun Wang / Hunan University

摘要

Short-circuit (SC) protection is critical to realize the normal operation of power devices. However, existing SC detection methods have the disadvantages of slow speed and limited application range. This paper presents a gate current I_G detection method to realize SC protection, which with the advantages of fast and simple. It has great applicability and can be applied to both 3-pin and 4-pin devices, moreover, it can both achieve hard switching fault (HSF) and fault under load (FUL). An experimental platform is set up to test the proposed short-circuit detection method. The experiment verifies that the proposed short-circuit detection method can be applied not only to HSF (137ns), but also to FUL (86ns).