537 / 2022-03-29 10:55:23
Study on the Microstructure and Electrical Properties of WO3-based Varistor Ceramics by Cold Sintering Process
CSP, WO3-based ceramics, electrical properties, capacitor-varistor
摘要录用
Zhiling Chen / Co-first author
Yuli Long / Co-first author
Qian Zeng / Co-first author
Shenglin Kang / author
Xuetong Zhao / Corresponding author
WO3-based varistor ceramics exhibit good non-linear electrical properties characterized by low voltages and small currents, which are expected to be widely used in the field of microelectronics. Nonetheless, it has always been a challenge to prepare dense varistor ceramics with grain sizes of nano/submicron using conventional high temperature sintering processes. Here, the microstructure, non-linear electrical properties, and dielectric properties of NiO-doped WO3 ceramics prepared by cold sintering process (CSP) at 300 °C are investigated. The results show that the novel CSP is capable of successfully preparing high-density WO3-based varistor ceramics. The presence of a second phase NiWO4 between the grains of WO3-based varistor ceramics inhibits grain growth. A small quantity of NiO can significantly improve nonlinear properties of the WO3 ceramics. WO3-based varistor ceramics with 1 mol% NiO exhibit improved non-linear electrical properties with a low breakdown voltage of 11 V/mm and a large nonlinear coefficient of 16. The non-linear electrical behavior of NiO-doped WO3-based varistor ceramics can be attributed to the grain boundary interface defects. Additionally, the dielectric permittivity of NiO-doped WO3 ceramics is significantly enhanced, which enables it working as a capacitor-varistor materials.
重要日期
  • 会议日期

    09月25日

    2022

    09月29日

    2022

  • 08月15日 2022

    提前注册日期

  • 09月10日 2022

    报告提交截止日期

  • 11月10日 2022

    注册截止日期

  • 11月30日 2022

    初稿截稿日期

  • 11月30日 2022

    终稿截稿日期

主办单位
IEEE DEIS
承办单位
Chongqing University
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