Ratio based Resistive RAM for Low Error Rate, High Energy Efficiency and In-Memory Computing
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更新:2021-08-23 19:39:32
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摘要
In this talk, we will present the concept and mechanism of ratio-based encoding for resistive memory cells, in which the resistance ratio of a pair of resistance-switching devices, rather than the resistance of a single device (i.e. resistance-based encoding), is used for encoding the information. This encoding significantly reduces the bit error probability of ReRAM memory cells. Applicable to both single-level and multi-level memory cells, we demonstrate the advantages of the ratio-based encoding over the resistance-based encoding for designing robust ReRAM systems. We experimentally validated the findings on multiple resistance-switching devices and show that, compared to the resistance-based encoding on the same resistive devices, the proposed approach achieves up to 3 orders of magnitude lower bit error probability, or alternatively it could reduce the cell’s programming time and programming energy by 5–10X , while achieving the same bit error probability. With greater robustness and reliability, ratio-based ReRAM also serves as a promising candidate for in-memory computing.
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