Hewei Gao

Associate Professor of Engineering Physics, Tsinghua University

Dr. Hewei Gao got his BS degree in 2003 and then PhD degree in 2008 both from Tsinghua University. After graduation, he was further trained as a postdoctoral fellow for 2 years at Stanford University in California, USA. In 2010, he joined GE Global Research in New York, and later transferred to GE Healthcare in Wisconsin, working on the R&D of GE’s latest 256-slice Revolution CT and its volume spectral CT imaging technology for 6 years. In 2016, he went back to California and worked at Reflexion Medical in Silicon Valley on its PET/CT-guided radiotherapy device until returning to Tsinghua University in 2018. His academic interests include the scientific research and technology innovations in X-ray/CT imaging and its applications. He has published more than 70 journal papers and conference abstracts, and holds 15 US patents as an inventor.