SHI KAIXI / Changchun University of Science and Technology
Low-dimensional hybrid heterojunctions, with their unique optical and electronic properties, are widely utilized in image sensors, optical communications, biological imaging, and other fields. However, achieving both high responsivity and fast response speed in photodetectors is often challenging due to the inherent contradiction between long carrier lifetime and rapid carrier separation. In our work, to achieve high-sensitivity hybrid heterojunction photodetectors, we focus on the study of the coupling strength and carrier dynamics of the heterojunction interface. (i) Different from traditional methods such as one-step growth and annealing, we innovatively proposed a physical adsorption method, which effectively reduces interface damage and contamination, resulting in a strongly coupled heterojunction interface.[1] (ii) For charge transfer in interfacial carrier dynamics, the interface carrier concentration was controlled by regulating the defect state of materials, resulting in a strong built-in electric field at the interface. For energy transfer in interfacial carrier dynamics, local surface plasmon resonance (LSPR) effect is employed to improve nonradiative energy transfer process, thus the photoelectric transfer efficiency was improved.[2] The results show that hybrid heterojunction photodetectors can achieve high responsivity up to several hundred A/W and response speeds in the nanosecond range. This excellent performance suggests their potential for future applications in artificial neural networks.