On account of the mutual inhibition of hydrolysis and condensation reactions before silane film formation, the binding force between silane film and metal surface is limited and the compactness is insufficient, which results in the limited protective performance of silane film against metal. Electrochemical assisted deposition can promote the hydrolysis first and then the condensation polymerization reaction. GO is an excellent barrier material. It is not only a good nano-filling material, but also can increase the compactness of the composite film, so the flake nano-GO is doped into the silane film. In this paper, SiO2/GO composite films were prepared on copper surface by electrochemically assisted deposition (EAD) using a single silicon source methyltriethoxysilane under the condition of constant potential. The properties of SiO2/GO composite films were investigated by SEM, EDS and Raman spectroscopy. The results show that the flake GO is distributed randomly in the composite film, and the presence of the GO the deposition process and the microstructure of the SiO2 film, making the surface of the film more compact and uniform. Dynamic potential polarization tests show that SiO2/GO composite film can significantly improve the corrosion resistance of copper, corrosion potential significantly positive shift 0.27 V, The corrosion current density is significantly reduced by more than one order of magnitude.The contact angle measuring instrument found that with the increase of SiO2 film thickness, the contact Angle increases, the film can change from hydrophilic to hydrophobic, and the maximum contact Angle can reach more than 140°.