134 / 2019-10-29 14:44:36

Concentration modified electrical and optical properties of sputtered binary SnO2-Al2O3 thin films on slide glasses

SAO binary thin films, radio frequency (RF) magnetron sputtering, electrical properties, optical properties

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SnO2-Al2O3 (SAO) binary thin films were prepared on slide glasses substrates by RF magnetron sputtering. Four samples with concentrations of Al2O3 0.05 mol%, 0.25 mol%, 0.5 mol% and 1 mol% are sputtered at 300 C for 2h, respectively. The electrical and optical properties modified by the concentration of Al2O3 were analyzed by using four-probe measuring, UV-IR and photoluminescence (PL) spectra. A high average transmittivity of 80%- 90% was achieved in visible light region 400-800nm. The calculated band gap was in a range of 4.02-4.14eV, relative widened gaps can be achieved by increasing doping level. The measured resistivity of SAO films was in a range of 2.60-3.35 . A relative higher doping level can reduce resistivity to around 2.60 . A relative higher doping level can enhance both UV and red peaks. These polycrystalline SAO films can be used in the application of transparent conductive oxide films, solar cell windows, sensors, as well as lighter emitters.