24 / 2018-02-13 18:04:50

Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate

group-III nitride, LED and HEMT processes

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GaN-based high-power light-emitting diodes (LEDs) used in lighting applications typically require dedicated electronic driver circuits for AC-DC power conversion, current sourcing, and dimming using pulse-width modulation (PWM) or analog current control methods. 1 GaN power switching field-effect transistors (FETs), such as metal oxide-semiconductor (MOS) FETs, high-electron-mobility transistors (HEMTs), and MOS-Channel HEMTs (MOSC- HEMTs) have shown outstanding performance in terms of high breakdown voltage (BV), low specific on-resistance, and high operating frequency, 2–4 and can be very useful as output devices for emerging applications of high power–high voltage LED systems.